Apparatus for manufacturing semiconductor single crystals

Details Apparatus for manufacturing semiconductor single crystals Apparatus for manufacturing semiconductor single crystals

1997-11-21

1999-08-10

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117218, 117222, 117900, C30B 3500

Patent

active

059353260

ABSTRACT:
An cylindrical after-heater surrounding a single crystal being lifted and a cylindrical heat-retaining cylinder installed between the after-heater and the single crystal are provided above a reversed frustrated heat-shielding sleeve disposed near the melted liquid. The heat history of the single crystal can be controlled by adjusting the output of the after-heater and the location of the heat-retaining cylinder. By such an arrangement, rapid respond to the change of the heat environment in a furnace can be made and control of the temperature gradient of the single crystal can be achieved. The single crystal, throughout the whole length, is maintained in the range of from 1000.degree. C. to 1200.degree. C. for more than one hour during lifting operation.

REFERENCES:
patent: 4544528 (1985-10-01), Stormont et al.
patent: 4597949 (1986-07-01), Jasinski et al.
patent: 5268061 (1993-12-01), Sunwoo et al.
patent: 5394825 (1995-03-01), Schmid et al.
patent: 5720810 (1998-02-01), Arai et al.

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