Method for manufacturing an aligned opening in an integrated cir

Details Method for manufacturing an aligned opening in an integrated cir Method for manufacturing an aligned opening in an integrated cir

1996-08-07

1998-08-18

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438635, H01L 21302, H01L 2131

Patent

active

057958220

ABSTRACT:
The present invention relates to a method of forming an aligned opening in a semiconductor device. A polysilicon layer is formed over the device. Then an opening is formed in the polysilicon layer by using patterning and etching. Subsequently, a thermal oxidation is performed to expand the volume of the polysilicon layer thereby narrowing the opening. The opening is smaller than the original opening generated by the patterning and etching, which will increase the accuracy of a opening.

REFERENCES:
patent: 5266523 (1993-11-01), Manning
patent: 5279989 (1994-01-01), Kim
patent: 5330934 (1994-07-01), Shibata et al.
patent: 5368682 (1994-11-01), Park
patent: 5663100 (1997-09-01), Park et al.

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