Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-05-28
1997-08-19
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257586, 257622, H01L 2976
Patent
active
056591934
ABSTRACT:
The present invention is provided in order to suppress a leak current at an emitter-base junction and to implement a high-speed operation of a bipolar transistor. An n.sup.+ buried layer is formed at a surface of a p.sup.- silicon substrate. An n.sup.- epitaxial growth layer and an n.sup.+ diffused layer are formed on n.sup.+ buried layer. A p.sup.+ external base region and a p.sup.- base region are formed at a surface of n.sup.- epitaxial growth layer so as to be adjacent to each other. A first interlayer insulating layer having an opening is formed on p.sup.- base region. A groove which is located under opening and extends under first interlayer insulating layer is formed at a surface of p.sup.- base region. An n.sup.+ emitter region is formed at a bottom surface of groove within p.sup.- base region. A sidewall insulating layer is formed so as to expose n.sup.+ emitter region and to cover a sidewall of opening and to come into contact with a bottom surface of first interlayer insulating layer.
REFERENCES:
patent: 4902639 (1990-02-01), Ford
patent: 5235206 (1993-08-01), Desilets et al.
patent: 5374846 (1994-12-01), Takemura
patent: 5455448 (1995-10-01), Benjamin
patent: 5468989 (1995-11-01), Nishizawa et al.
"Sub Um Bicmos Technology and its Future Trend", Hiroshi Momose, SDM89-49, pp. 1-8 Dec. 1989.
Mitsubishi Denki & Kabushiki Kaisha
Prenty Mark V.
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