Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1992-09-14

1995-01-31

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257300, 257303, 257305, 257306, H01L 2968, H01L 2978, H01L 2992

Patent

active

053861310

ABSTRACT:
A DRAM having memory cells each consisting of a MOS transistor and a trench-stack capacitor built at a p-type silicon substrate. The MOS transistor comprises a source region made of the first diffused n.sup.- layer, and a drain region composed of the first diffused n.sup.- layer and the first diffused n.sup.+ layer self-aligned with respect to a bit contact hole. At the surface of the p-type silicon substrate is formed a trench penetrating through the source region near the gate electrode of the MOS transistor working also as a word line. The capacitor is built to extend deep into a U-shaped section. The second diffused n.sup.- layer is formed at the the trench sidewall surface of the p-type silicon substrate, and the second insulating film is formed over the sidewall of the trench. The second diffused n.sup.+ layer is formed at the trench bottom surface of the p-type silicon substrate. The bottom face of the trench functions as a node contact hole of the memory cell. The storage node electrode of the trench-stacked capacitor is electrically connected through the node contact hole, the second diffused n.sup.+ layer and the second diffused n.sup.- layer to the source region. The structure mentioned above has not only the same effects as the conventional trench-stacked capacitor DRAM over the trench capacitor DRAM but also an effect of less memory cell space than the conventional trench-stacked capacitor DRAM.

REFERENCES:
patent: 4752819 (1988-06-01), Koyama
patent: 4803535 (1989-02-01), Taguchi
patent: 4920390 (1990-04-01), Fuse et al.
patent: 4922313 (1990-05-01), Tsuchiya
patent: 5027172 (1991-06-01), Jeon
patent: 5065215 (1991-11-01), Kubota
patent: 5066609 (1991-11-01), Yamamoto et al.
patent: 5111259 (1992-05-01), Teng et al.
patent: 5136533 (1992-08-01), Harari

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