Method for producing a single-crystalline layer

Details Method for producing a single-crystalline layer Method for producing a single-crystalline layer

1986-03-03

1988-11-15

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG88, 437 83, C30B 1322

Patent

active

047847239

ABSTRACT:
A method of producing a semiconductor device includes the steps of preparing a base body, forming a non-single-crystalline semiconductor layer on the base body, and irradiating the non-single-crystalline semiconductor layer with an energy beam having a strip shaped irradiation region, in such a manner that either the base body or the energy beam is moved in a direction other than a scanning direction of the energy beam.

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patent: 4737233 (1988-04-01), Kamgar et al.
Gutfeld, IBM Tech. Disc. Bull., vol. 19, No. 10, Mar. 1977, pp. 3955-3956.
Gutfeld, "Crystallization of Silicon for Solar Cell Applications", IBM Technical Disclosure Bull., vol. 19, No. 10, 3/77.

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