Method for manufacturing integrated semiconductor devices

Details Method for manufacturing integrated semiconductor devices Method for manufacturing integrated semiconductor devices

1993-06-25

1995-01-31

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156631, 156633, 1566591, 156662, 156657, 437 5, 437209, 437229, 437238, H01L 21306, B44C 122, C03C 1500

Patent

active

053856325

ABSTRACT:
An integrated semiconductor device is formed by bonding the conductors of one fabricated semiconductor device having a substrate to the conductors on another fabricated semiconductor device having a substrate, flowing an etch-resist in the form of a photoresist between the devices, allowing the etch-resist to dry, and removing the substrate from one of the semiconductor devices. Preferably the etch-resist is retained to impart mechanical strength to the device. More specifically, a hybrid semiconductor device is formed by bonding the conductors of one or more GaAs/AlGaAs multiple quantum well modulators to conductors on an IC chip, flowing a photoresist between the modulators and the chip, allowing the photoresist to dry, and removing the substrate from the modulator.

REFERENCES:
patent: 5068006 (1991-01-01), Fisher
patent: 5073230 (1991-12-01), Maracas et al.
patent: 5207864 (1993-05-01), Bhat et al.
K. W. Goossen, G. D. Boyd, J. E. Cunningham, W. Y. Jan, D. A. B. Miller, D. S. Chemla and R. M. Lum, "GaAs-AlGaAs Multiquantum Well Reflection Modulators Grown on GaAs and Silicon Substrates" in IEEE Photon. Tech. Lett., vol. 1, p. 304, 1989.
P. Barnes, P. Zouganeli, A. Rivers, M. Whitehead, G. Parry, K. Woodbridge, and C. Roberts, "GaAs/AlGaAs Multiple Quantum Well Optical Modulator Using Multilayer reflector Stack Grown on Si Substrate" in Electron. Lett., vol. 25, p. 995, 1989.
P. Barnes, K. Woodbridge, C. Roberts, A. A. Stride, A. Rivers, M. Whitehead, and G. Parry, "GaAs multiple quantum well microresonator modulators grown on silicon substrates" in Opt. Quantum Electron, vol. 24, p. S177, 1992.
K. W. Goossen, J. A. Walker, J. E. Cunningham, W. Y. Jan, D. A. B. Miller, S. K. Tewksbury, and L. A. Hornak, "Monolithic Integration of GaAs/AlGaAs Multiple Quantum Well Modulators and Silicon Metal-Oxide-Semiconductor Transistors" presented at the 1993 Quantum Optoelectronics meeting, Palm Springs, Calif.
J. Wieland, H. Melchior, M. Q. Kearley, C. Morris, A. J. Moseley, M. G. Goodwin, and R. C. Goodfellow "Optical Receiver Array in Silicon Bipolar Technology With Selfaligned, Low Parasitic III/V Detectors for DC-1 Gbits/s Parallel Links" in Electron Lett., vol. 27, p. 2211, 1991.
C. Camperi-Ginestet, M. Hargis, N. Jokerst, and M. Allen, "Alignable Epitaxial Liftoff of GaAs Materials with Selective Deposition Using Polymide Diaphragms", IEEE Photon. Tech. Lett., vol. 3, p. 1123, 1991.

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