Thin film capacitive memory device with a high dielectric consta

Details Thin film capacitive memory device with a high dielectric consta Thin film capacitive memory device with a high dielectric consta

1992-05-12

1994-11-15

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257295, 257306, 257310, H01L 2968, H01L 2978, H01L 2722, H01L 2982

Patent

active

053650964

ABSTRACT:
A semiconductor device comprising a capacitor which comprises a lower electrode, a dielectric insulating film of a metal oxide, and a upper electrode. The lower electrode is made of at least yttrium (Y) or hafnium (Hf).

REFERENCES:
patent: 3988824 (1976-11-01), Bodway
patent: 4423087 (1983-12-01), Howard et al.
patent: 4891684 (1990-01-01), Nishioka et al.
patent: 5128784 (1992-07-01), Suzuki et al.
IEEE Transaction on Electron Devices, vol. 37, No. 9, Sep. 1990, pp. 1939-1946.
Tsutsumi, "Dielectric Properties of Y.sub.2 O.sub.3 Thin Films Prepared by Vacuum Evaporation", Jap. Journal of Applied Physics, vol. 9 No. 7, Jul. 1970.

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