Semiconductor device including ferroelectric nonvolatile memory

Details Semiconductor device including ferroelectric nonvolatile memory Semiconductor device including ferroelectric nonvolatile memory

1992-11-12

1994-11-15

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257410, H01L 2978

Patent

active

053650948

ABSTRACT:
The present invention provides a ferroelectric nonvolatile memory that utilizes ferroelectric properties and is able to operate correctly at lower voltage. A memory storage cell of the memory has the structure wherein a N+ type drain (24) and a N+ type source (26) is provided for a P type well (14) created in the substrate. A film (22) of high dielectric material spans the space (28) between the drain (24) and the source (26). A conductive metalization (20) overlies the film (22), a film (18) of ferroelectric material overlies the conductive metalization (20) and a metalization 16 overlies the film (18).

REFERENCES:
patent: 4888630 (1989-12-01), Paterson
patent: 5099305 (1992-03-01), Takenaka
patent: 5218512 (1993-06-01), Nakamura
Arnett, P. "Ferroelectric FET Devices", IBM Tech. Disclosure Bulletin, vol. 15, No. 9, Feb. 1973, p. 2825.

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