Coaxial plasma processing apparatus

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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118723ER, 118724, 118725, H01L 2100

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053644883

ABSTRACT:
A plasma processing apparatus for ashing semi-conductors wafers has a vertically elongate cylindrical chamber for generating a plasma for processing a workpiece housed therein with heat applied thereto. The cylindrical chamber has upper and lower open ends closed respectively by upper and lower chamber plates. A cooling coil is positioned above the upper chamber plate. A temperature controller actuates a fan unit to force an air flow over the cooling coil to the upper chamber plate for keeping the temperature in the cylindrical chamber within a predetermined range. The plasma processing apparatus includes inner and outer electrodes disposed inside and outside, respectively, of the cylindrical chamber, and a Radio Frequency generator for generating the plasma between the inner and outer electrodes.

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patent: 5097890 (1992-03-01), Nakao
patent: 5099100 (1992-03-01), Bersin et al.
patent: 5169478 (1992-12-01), Miyamoto et al.
Perry and Chilton, Chemical Engineers' Handbook, 5th Edition, 1973, pp. 22-72 to 22-73.

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