Selective and anisotropic dry etching

Details Selective and anisotropic dry etching Selective and anisotropic dry etching

1987-03-18

1988-03-29

Bashore, S. Leon

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 156657, 156662, 1566591, 252 791, B44C 122, H01L 21308, C23F 112

Patent

active

047341572

ABSTRACT:
A composition and method for anistropically etching polysilicon or silicides with excellent selectivity to an underlying layer of an oxide or nitride of silicon is disclosed. A mixture of CClF.sub.3 or CCl.sub.2 F.sub.2 and ammonia is employed at moderate pressures in a reactive ion etching chamber.

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