Metal treatment – Compositions – Heat treating
Patent
1985-08-26
1987-04-07
Ozaki, George T.
Metal treatment
Compositions
Heat treating
29576E, 148174, 148175, 148186, 427 76, 428620, H01L 2138, H01L 2136
Patent
active
046558489
ABSTRACT:
A layer of HgCdTe (15) epitaxially grown onto a crystalline support (10), e.g., of sapphire of GaAs. A CdTe substrate (5) is epitaxially grown to a thickness of between 1 micron and 5 microns on the support (10). A HgTe source (3) is spaced from the CdTe substrate (5) a distance of between 0.1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500.degree. C. and 625.degree. C. for a growth step having a duration of between 5 minutes and 4 hours. Then an interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400.degree. C. and 500.degree. C. for a time of between 1 hour and 16 hours. In a first growth step embodiment, the source (3) and substrate (5) are isothermal. In a second growth step embodiment, the source (3) and substrate (5) are non-isothermal. Means are disclosed for preventing contamination of the reactants during HgTe (3) synthesis, and for polishing the HgCdTe layer (15).
REFERENCES:
patent: 3622405 (1971-11-01), Schmit
patent: 4418096 (1983-11-01), Gauthier et al.
patent: 4447470 (1984-05-01), Kay
patent: 4487640 (1984-12-01), Erstfeld
patent: 4487813 (1984-12-01), Kay
patent: 4588446 (1986-05-01), Tegilgas
Marfaing et al., Crystal Growth, "A New Process of Crystal Growth: Evaporation-Diffusion Under Isothermal Conditions", Pergamon Press, N.Y., Jun. 20-24, 1966, pp. 549-552.
Tufte et al., "Growth and Properties of Hg.sub.1-x Cd.sub.x Te Epitaxial Layers", J. Applied Phys., vol. 40, No. 11, pp. 4559-4568, (Oct. 1969).
Vohl et al., J. Electronic Materials, vol. 7, No. 5, pp. 659-678, (1978), "Vapor Phase Growth of Hg.sub.1-x Cd.sub.x Te Epitaxial Layers".
Bray Burton A.
Chan Hakchill
Ju Fred
Kay Robert E.
Ford Aerospace & Communications Corporation
Ozaki George T.
Radlo Edward J.
Sadler Clifford L.
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