Metallization process for integrated circuits

Details Metallization process for integrated circuits Metallization process for integrated circuits

1982-08-23

1985-04-02

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Electrical device making

29577C, 357 68, 357 71, 156643, H01L 21285

Patent

active

045078530

ABSTRACT:
Metal contacts and interconnections for semiconductor integrated circuits are formed by a process of two metal depositions to increase step or sidewall coverage. After a first layer of metal is deposited, a preferential etch removes all of the metal except on the vertical sides of steps or apertures. A second layer of metal is deposited over the remaining parts of the first, resulting in smoother transistions and greater thickness at steps.

REFERENCES:
patent: 4291322 (1981-09-01), Clemens et al.
patent: 4392298 (1983-07-01), Barker

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