Method of producing semiconductor device

Details Method of producing semiconductor device Method of producing semiconductor device

1984-11-09

1986-07-01

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29571, 29576B, 29580, 148187, 148188, 156646, 156653, 156657, 156662, 357 234, 357 41, 357 91, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

045978247

ABSTRACT:
A method of producing a MOS transistor of LDD structure with p(n) type pockets. A doped oxide film in which impurities such as phosphorus and impurities such as arsenic are doped is formed on a semiconductor substrate, and a nitride film is formed in regions where p type pockets are formed on the both sides of a gate electrode. By implementing heat treatment in the atmosphere of oxygen, the portion below the nitride film is placed in the condition where it is equivalent when heat treated in the atmosphere of nitrogen whereby a p type impurity region and an n.sup.- type impurity region are formed. The region except for that below the nitride film is heat treated in the atmosphere of oxygen to form an n.sup.+ type impurity region. Further, with the gate electrode as a mask, n.sup.- type impurity region and p type impurity region are formed, thereafter selectively growing a film on the side walls of the gate electrode to form an n.sup.+ type impurity region with the gate electrode and the film as masks, thus producing a MOS transistor.

REFERENCES:
patent: 4484388 (1984-11-01), Iwasaki
patent: 4498227 (1985-02-01), Howell et al.
patent: 4506437 (1985-03-01), Godejahn
Itoh, T., et al, "Effect of Atmospheres on Arsenic Diffusion into Silicon from the Doped Oxide Layer", Journal of Applied Physics, vol. 46, No. 5, May 1975.

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