Semiconductor memory device having means for outputting redundan

Details Semiconductor memory device having means for outputting redundan Semiconductor memory device having means for outputting redundan

1999-03-04

2000-09-19

Nelms, David

Static information storage and retrieval

Read/write circuit

Bad bit

365222, 3652257, 36523003, G11C 700

Patent

active

061222062

ABSTRACT:
A semiconductor memory device having redundant memory selection circuit XRDN which outputs a redundant replacement selection signal for each bank. In a refreshing operation, each redundant decoder XRED only compares an address indicated by row address signal XADD with an address of a defective memory cell stored, without referring to a bank selection signal included in row address signal XADD. Redundant memory cell selection circuit XRDN outputs redundant replacement selection signals XRDNS(A), (B) for respective banks A, B, for indicating a bank in which the replacement is to be performed with a redundant memory cell.

REFERENCES:
patent: 5796664 (1998-08-01), Tsuruda et al.
patent: 5808948 (1998-09-01), Kim et al.
patent: 5822257 (1998-10-01), Ogawa

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