Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-10-26
1995-10-03
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257409, 257488, 257490, H01L 23535, H01L 2940
Patent
active
054554390
ABSTRACT:
The present invention relates to a semiconductor device which is fabricated in simple process steps and which prevents deterioration in a breakdown voltage. Two diffusion regions are formed in space in a surface of an n.sup.- type layer. The diffusion regions are separated from each other by an insulation layer, but each in contact with a conductive film. Another conductive film is disposed on the insulation layer. The three conductive films are insulated from each other by the insulation layer and still another overlying insulation layer. Still other conductive films are formed on the upper insulation layer, and are coupled to the three conductive films. A wiring conductive film is also formed on the upper insulation layer. The wiring conductive film has a relatively small capacitance with the three conductive films. Due to the device structure, influence of the wiring conductive film over the surface of the semiconductor device is blocked by the conductive films. Hence, an electric field concentration will not result.
REFERENCES:
patent: 4766474 (1988-08-01), Nakagawa et al.
patent: 5040045 (1991-08-01), McArthur et al.
patent: 5204545 (1993-04-01), Terashima
Patent Abstracts of Japan, vol. 012, No. 013 (E-573) 14 Jan. 1988 JP-A-62 173 764 (Matsushita Electric Works Ltd) Jul. 30, 1987.
Satsuma Kazumasa
Terashima Tomohide
Yoshizawa Masao
Brown Peter Toby
Mintel William
Mitsubishi Denki & Kabushiki Kaisha
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