SRAM cell with p-channel pull-up sources connected to bit lines

Static information storage and retrieval – Systems using particular element – Flip-flop

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365156, 365203, G11C 1100

Patent

active

060117117

ABSTRACT:
A static random access memory cell comprising a storage latch having a first upper power supply voltage connection to a first bit line, a second upper power supply voltage connection to a second bit line, and a connection to a lower power supply voltage. A first access circuit connects the storage latch to the first bit line and a second access circuit connects the storage latch to the second bit line, wherein the storage latch is accessed utilizing the first access circuit and the second access circuit.

REFERENCES:
patent: 4198695 (1980-04-01), McElroy
patent: 4839862 (1989-06-01), Shiba et al.
patent: 5477501 (1995-12-01), Suzuki

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