Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-10-27
1997-08-05
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257326, 257314, 257295, H01L 29792
Patent
active
056545681
ABSTRACT:
The present invention provides a nonvolatile semiconductor memory which has advantages permitting the cell of the memory circuit to integrate, the memory circuit to be easy to manufacture, and the manufacturing expense to be cut down. The nonvolatile memory 21 comprises a P type well for which a N+ type source 4 and a N+ type drain 3 are provided. A surface of a space between the source 4 and the drain 3 comprises a first portion 10a and a second portion 10b. An insulating layer 6 for holding electrons spans the surface of the space. A memory gate electrode 5 is on the insulating layer 6 and spans the first portion 10a. An insulating body 23 is formed on the surface of the insulating layer 6 so that it connects to the memory gate electrode 5 through an insulating layer 8 and spans the second portion 10b.
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Carroll J.
Rohm & Co., Ltd.
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