Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-05-06
1997-08-05
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257421, 257422, 257426, 257427, 360113, 324249, 324252, 365 97, 365145, 365171, 3652435, H01L 2982, H01L 4300
Patent
active
056545665
ABSTRACT:
A new hybrid magnetic spin injected-FET structure can be used as a memory element for the nonvolatile storage of digital information, as well as in other environments, including for example logic applications for performing digital combinational tasks, or a magnetic field sensor. The hybrid FET uses ferromagnetic materials for the source and drain, and like a conventional FET, has two operating states determined by a gate voltage, "off" and "on". The ferromagnetic layers of the hybrid FET are fabricated to permit the device to have two stable magnetization states, parallel and antiparallel. In the "on" state the spin injected FET has two settable, stable resistance states determined by the relative orientation of the magnetizations of the ferromagnetic source and drain. An external magnetic field can change the magnetization state of the device by orienting the magnetization of the drain to be parallel or antiparallel with that of the source, thus changing the resistance of the device to a current of spin polarized electrons injected into the source and flowing to the drain through the channel under the gate. The new FET can be used as a memory cell because the drain magnetization is non-volatile, and can represent a binary data value to be stored in the cell. A conductive write line can be used for inductively coupling an input magnetic field (representing a data value to be stored in the device) with the drain magnetization to alter the orientation state of the latter. An array of spin injected FETs can be coupled together in an array to form a new hybrid FET memory array. The new FET can also be used as a logic gate that stores the result of a boolean function. A magnetic field generated by the combined current of one or more input data signals is coupled to the spin injected FET. Depending on the particular function to be implemented, the ferromagnetic drain magnetization can be configured to change or retain its orientation based on particular predefined combinations of input data signals.
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