Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-12-30
2000-09-19
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257316, 257344, H01L 29788, H01L 2976
Patent
active
061216550
ABSTRACT:
The nonvolatile semiconductor memory device of the present invention includes: a semiconductor substrate having a surface including a first surface region at a first level, a second surface region at a second level lower than the first level, and a step side region linking the first surface region and the second surface region together; a channel region formed in the first surface region of the semiconductor substrate; a source region and a drain region which are formed in the surface of the semiconductor substrate so as to interpose the channel region therebetween; a first insulating film formed on the surface of the semiconductor substrate; a floating gate formed on the first insulating film; a second insulating film formed on the floating gate; and a control gate which is capacitively coupled to the floating gate via the second insulating film. The drain region includes a low-concentration impurity layer which is formed in the second surface region and which has one end extending toward the step side region, and a high-concentration impurity layer which is connected to the low-concentration impurity layer and which is formed in a region distant from the channel region. As impurity concentration of the low-concentration impurity layer is lower than an impurity concentration of the high-concentration impurity layer. The floating gate covers the step side region and at least a part of the low-concentration impurity layer via the first insulating film.
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Akamatsu Kaori
Hori Atsushi
Kato Jun-ichi
Odanaka Shinji
Ogura Seiki
Halo LSI Design and Device Technologies, Inc.
Loke Steven H.
Matsushita Electric - Industrial Co., Ltd.
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