Semiconductor device with ferroelectric capacitors

Details Semiconductor device with ferroelectric capacitors Semiconductor device with ferroelectric capacitors

1999-07-15

2000-09-19

Smith, Matthew

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257295, 257296, 257298, 257300, 257310, 456239, 456240, H01L 2980

Patent

active

061216496

ABSTRACT:
A non-volatile memory has transistors and capacitors formed on a semiconductor substrate. The capacitors have a lower electrode, a ferroelectric film and an upper electrode stacked in order. An insulating film with at least one contact hole is formed on the substrate to cover the gate of each transistor. A side-wall insulating film is also formed to cover the side faces of the lower electrode and the ferroelectric film. A contact electrically connects the upper electrode and the source or drain of each transistor. The side-wall insulating film electrically isolates the contact from the lower electrode. The contact is made of a material at least the portion connected to the upper electrode and the other portion adjacent to that portion. The upper electrode is also made of that material. The upper electrode and the portion of the contact connected to the upper electrode are thus joined each other.

REFERENCES:
patent: 5668041 (1997-09-01), Okadaira et al.
patent: 5708284 (1998-01-01), Onishi
patent: 5717236 (1998-02-01), Shinkawata
patent: 5753946 (1998-05-01), Naiki et al.
patent: 5767541 (1998-06-01), Hanagasaki
patent: 5768185 (1998-06-01), Nakamura et al.
patent: 5774832 (1998-04-01), Wolters et al.
patent: 5990507 (1999-11-01), Mochizuki et al.
IEEE Journel, "A High Stability Electrode Technology for Stacked SrBi.sub.2 Ta.sub.2 O.sub.9 Capacitors Applicable to Advanced Ferroelectric Memory", J. Kudo et al., 1997, pp. 25.4.1-25.4.4.

Affiliated with

Also associated with

Rating

Semiconductor device with ferroelectric capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with ferroelectric capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with ferroelectric capacitors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1075957