Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-05-25
2000-09-19
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257310, 257303, H01L 2976, H01G 702
Patent
active
061216488
ABSTRACT:
A ferroelectric memory cell for storing information and a method for fabricating the same. The information is stored in the remnant polarization of a ferroelectric dielectric layer by setting the direction of the remnant polarization. The ferroelectric memory cell is designed to store the information at a temperature less than a first temperature. During the fabrication process, the memory cell is subjected to an annealing operation in the presence of hydrogen at a second temperature and a packaging operation at a third temperature. The memory cell includes top and bottom contacts that sandwich the dielectric layer which includes a ferroelectric material having a Curie point greater than the first temperature and less than the second and third temperatures. The dielectric layer is encapsulated in an oxygen impermeable material such that the encapsulating layer prevents oxygen from entering or leaving the dielectric layer. The memory also includes a hydrogen barrier layer that inhibits the flow of hydrogen to the top and bottom electrodes when the memory cell is placed in a gaseous environment containing hydrogen. In one embodiment of the invention, a hydrogen-absorbing layer is constructed from a ferroelectric material having a Curie point of less than the second temperature but greater than the third temperature. An annealing operation at a temperature above the second and third temperature is utilized to reverse the damage resulting from the annealing operation in the presence of oxygen.
REFERENCES:
patent: 5541807 (1996-07-01), Evans
patent: 5578867 (1996-11-01), Argos et al.
patent: 5760433 (1998-06-01), Ramer et al.
Hu Shouxiang
Radiant Technologies, Inc
Thomas Tom
Ward Calvin B.
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