Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1993-01-05
1995-10-03
Breneman, R. Bruce
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419215, 2041922, 20429803, 20429807, 20429808, C23C 1454
Patent
active
054549205
ABSTRACT:
When depositing an alloy film on a substrate by sputtering, a thickness of the deposited alloy film is measured and accumulated with respect to one alloy target. A sputtering power or a sputtering gas pressure is calculated in accordance with a predetermined equation defining a desired saturation magnetostriction using the accumulated thickness. Thus, the sputtering power or sputtering gas pressure is controlled to obtain the desired saturation magnetostriction.
REFERENCES:
patent: 4166783 (1979-09-01), Turner et al.
patent: 4846948 (1989-07-01), Saito et al.
Shibaya et al., IEEE Transactions on Magnetics, vol. Mag 13, No. 4, Jul. 1977 "Preparation by Sputtering of Thick Sendust Film Suited for Recording Head Core" pp. 1029-1035.
Serikawa, Review of the Electrical Communication Laboratories vol. 25, Nos. 3-4, Mar.-Apr. 1977 "Permalloy Film Preparation by RF Sputtering" pp. 209-216.
"Magnetic Properties of Fe-Si-Al Sputtered Films", Japan Applied Magnetics Society Trans., vol. 11, No. 2, 1987 by M. Takahashi et al., pp. 299-302.
Breneman R. Bruce
McDonald Rodney G.
NEC Corporation
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