Method for making refractory metal silicide electrode

Details Method for making refractory metal silicide electrode Method for making refractory metal silicide electrode

1995-09-25

1997-08-05

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438658, 438660, H01L 2128

Patent

active

056542429

ABSTRACT:
A WSi.sub.x layer wherein the value of x as the stoichiometry of Si is not less than 2.7 and preferably not less than 3.0 is formed by LPCVD based upon reduction of SiCl.sub.2 H.sub.2 of WF.sub.6. Even if this WSi.sub.x film is used without an adhesion layer such as poly Si (polycide structure), it is excellent in adhesion with respect to an SiO.sub.2 film and provides a gate electrode capable of maintaining a satisfactory breakdown voltage value of a gate oxide film. If n-type and p-type impurities are ion-implanted into an nMOS forming region and a pMOS forming region of the WSi.sub.x layer and patterned, a gate electrode of a reduced thickness and a low resistance having a controlled work function may be formed for providing symmetrical threshold voltages.

REFERENCES:
patent: 4597163 (1986-07-01), Tsang
patent: 4966869 (1990-10-01), Hillman et al.
patent: 5231056 (1993-07-01), Sandhu
patent: 5395787 (1995-03-01), Lee et al.
patent: 5459101 (1995-10-01), Fujii et al.
patent: 5500249 (1996-03-01), Telford et al.

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