Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1995-03-23
1997-08-05
Bowers, Jr., Charles L.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
438957, H01L 21285, H01L 2184
Patent
active
056542070
ABSTRACT:
A two-terminal nonlinear device according to the present invention includes a lower electrode of a thin Ta film doped with nitrogen which is formed on a substrate, an anodized oxide film formed by anodizing a surface of the lower electrode, and an upper electrode of a metal thin film which is formed on the anodized oxide film, wherein the thin Ta film includes a structure in which first portions and second portions are alternately deposited, the first portions containing a different amount of nitrogen from that contained in the second portions.
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Fukuyama Toshiaki
Ishimoto Yoshihisa
Kishida Masahiro
Matoba Masakazu
Seike Takeshi
Bowers Jr. Charles L.
Radomsky Leon
Sharp Kabushiki Kaisha
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