Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1997-06-19
2000-09-19
Smith, Matthew
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438680, 438761, H01L 2131, H01L 21469
Patent
active
061211591
ABSTRACT:
A thermally stable inter-metal dielectric for interlayer dielectric material has enhanced adhesiveness by introduction of an adhesive material. The adhesive material may reside only at the interface of the inter-metal dielectric or interlayer dielectric with adjacent metalization and polysilicon layers. A disclosed thermally stable intermetal dielectric is a fluorinated polymer such as polyfluoropyreline. A disclosed adhesive material is a highly polar material such as a thiofluorocarbon. These materials may be deposited by chemical vapor deposition by first activating fluoropyreline monomer and di(thiodifluoromethane) in a heated activation chamber to convert them to a form suitably reactive to form a polymeric dielectric on a wafer surface.
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"Microprocessors Crossed Lines," Mar. 29, 1997, The Economist, pp. 88-89.
Hallinger Robert
LSI Logic Corporation
Smith Matthew
LandOfFree
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