Method of forming a void free copper interconnects

Details Method of forming a void free copper interconnects Method of forming a void free copper interconnects

1998-11-24

2000-09-19

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438622, 438660, H01L 2144

Patent

active

061211419

ABSTRACT:
Void free Cu or Cu alloy interconnects are formed by annealing at superatmospheric pressure after metallization. Embodiments include filling a damascene opening in a dielectric layer with Cu or a Cu alloy and heat treating in a chamber at a pressure of about 2 atmospheres to about 750 atmospheres.

REFERENCES:
patent: 4789648 (1988-12-01), Chow et al.
patent: 5252147 (1993-10-01), Verhoeven et al.
patent: 5518964 (1996-05-01), DiStefano et al.
patent: 5691238 (1997-11-01), Avanzino et al.
patent: 5801441 (1998-09-01), DiStephano et al.
patent: 5856068 (1999-01-01), Magera et al.
patent: 5863707 (1999-01-01), Lin
patent: 5916823 (1999-06-01), Lou et al.

Affiliated with

Also associated with

Rating

Method of forming a void free copper interconnects does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a void free copper interconnects, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a void free copper interconnects will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1072652