Method and apparatus for etching titanate with organic acid reag

Details Method and apparatus for etching titanate with organic acid reag Method and apparatus for etching titanate with organic acid reag

1994-07-05

1997-08-05

Nguyen, Nam

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 76, H01L 21302

Patent

active

056538510

ABSTRACT:
A method to anisotropically etch a titanate wafer (16 or 39) is provided. The method includes the steps of generating a plasma (32) and mixing an organic acid reagent with the plasma (32). The titanate wafer (16 or 39) is then exposed to the plasma (32) and organic acid reagent mixture thereby etching (42) the titanate wafer (16 or 39).

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