Method of manufacturing a substrate for manufacturing silicon se

Details Method of manufacturing a substrate for manufacturing silicon se Method of manufacturing a substrate for manufacturing silicon se

1995-03-01

1997-08-05

Kunemund, Robert

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

117915, 117101, 438460, 438977, C30B 2502, H01L 2120, H01L 21304

Patent

active

056538030

ABSTRACT:
One or a plurality of silicon growth layers are formed on both sides of a silicon base substrate wafer and the product is then divided, with the dividing plane in said silicon base substrate wafer parallel to the main surface, into two pieces to obtain two substrates used for manufacturing silicon semiconductor elements. Said dividing-in-half process is a process in which said silicon base substrate wafer portion is cut along a plane parallel to the main surface, or a process which includes said cutting process followed by a process of treating the cut-surface. Said process which cuts the silicon base substrate wafer portion is a process in which the wafers are cut one by one, or cut after a plurality of them are laminated.

REFERENCES:
patent: 4582559 (1986-04-01), Tanielian et al.
patent: 5362682 (1994-11-01), Bates et al.
patent: 5362683 (1994-11-01), Takenaka et al.
Patent Abstracts of Japan, v. 18, n8, E-1486, 7 Jan 1994 & JP-A-05 251294, Sep. 93 Matsunaga.
Patent Abstracts of Japan, v. 11, n309, E-547, 8 Oct. 1987 & JP-A-62 104062, 14 May 1987.

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