Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1998-12-18
2000-09-19
Diamond, Alan
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429802, 20429804, 20429805, 20429826, 20429811, 118728, 118733, 118723I, 118723MP, C23C 1600, C23C 16458, C23C 1450, C23C 1434
Patent
active
061206601
ABSTRACT:
A plasma treatment system (200) for implantation with a novel susceptor with a silicon coating (203). The system (200) has a variety of elements such as a chamber, which can have a silicon coating formed thereon, in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate. The silicon coating reduces non-silicon impurities that may attach to the silicon substrate. The system (200) also includes a silicon liner, which is used to line inner portions of the chamber walls.
REFERENCES:
patent: 4764394 (1988-08-01), Conrad
patent: 4808546 (1989-02-01), Moniwa et al.
patent: 4933063 (1990-06-01), Katsura et al.
patent: 5032202 (1991-07-01), Tsai et al.
patent: 5183775 (1993-02-01), Levy
patent: 5196355 (1993-03-01), Wittkower
patent: 5289010 (1994-02-01), Shohet
patent: 5296272 (1994-03-01), Matossian et al.
patent: 5304279 (1994-04-01), Coultas et al.
patent: 5305221 (1994-04-01), Atherton
patent: 5311028 (1994-05-01), Glavish
patent: 5342652 (1994-08-01), Foster et al.
patent: 5380682 (1995-01-01), Edwards et al.
patent: 5427638 (1995-06-01), Goetz et al.
patent: 5436175 (1995-07-01), Nakato et al.
patent: 5525159 (1996-06-01), Hama et al.
patent: 5554249 (1996-09-01), Hasegawa et al.
patent: 5554853 (1996-09-01), Rose
patent: 5580429 (1996-12-01), Chan et al.
patent: 5641707 (1997-06-01), Moslehi
patent: 5653811 (1997-08-01), Chan
patent: 5661043 (1997-08-01), Rissman et al.
patent: 5711812 (1998-01-01), Chapek et al.
patent: 5854123 (1998-12-01), Sato et al.
Fan et al, "Sample stage induced dose and energy nonuniformity in plasma immerson ion implantation of silicon," Appl. Phys. Lett., vol. 73, No. 2, pp. 202-204, Jul. 1998.
Zhang et al., "Low-energy separation by implantation of oxygen structures via plasma source ion implantation," Applied Physics Letters, 65(8):962-964 (1994). (Month Unknown).
Chan Chung
Chu Paul K.
Diamond Alan
Silicon Genesis Corporation
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