Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1998-07-29

2000-05-09

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257532, 428688, H01L 2976

Patent

active

06060736&

ABSTRACT:
The present invention is a semiconductor device having a capacitor employing ferroelectrics as a capacitor insulating film. The semiconductor device comprises a semiconductor substrate 11, an insulating film 12 formed on the semiconductor substrate 11, and a capacitor including (a) a lower electrode formed on the insulating film and made of a refractory metal whose face orientation (111) appears on an upper surface thereof, (b) a capacitor insulating film formed on the lower electrode and made of at least two layers consisting of a ferroelectrics film including Pb having a face orientation (111) and a ferroelectrics film including Pb having a face orientation (100), and (c) an upper electrode 15 formed on the capacitor insulating film 14.

REFERENCES:
patent: 5453294 (1995-09-01), Ogi et al.
patent: 5650362 (1997-07-01), Nashimoto
patent: 5719417 (1998-02-01), Roeder et al.

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