Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-04-21
2000-05-09
Nelms, David
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438681, 438683, 438685, H01L 2144
Patent
active
060603917
ABSTRACT:
A heating mechanism for heating a substrate is disposed in a growth chamber, a bulb capable of controlling the quantity of gas flowing into the growth chamber is provided between a plurality of organic metal gas sources and the growth chamber. A plasma chamber for inert gas having a transparent portion is provided, the plasm chamber receiving a part of an organic metal raw material gas supplied to the growth chamber through an orifice. The plasma chamber is provided with an exhaustion system performing a differential air exhausting for the plasma chamber and the growth chamber. Provided is an optical system for measuring an light emission intensity by separating emitted light characteristic of a metal in the organic metal raw material gas, the light is emitted from the metal by exciting the organic metal raw material gas partially supplied to the plasma chamber from the growth chamber through the orifice.
REFERENCES:
patent: 5202283 (1993-04-01), Younger et al.
patent: 5691009 (1997-11-01), Sandhu
patent: 5840628 (1998-11-01), Miyamoto
Berry Renee R.
NEC Corporation
Nelms David
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