Semiconductor fabrication employing a conformal layer of CVD dep

Details Semiconductor fabrication employing a conformal layer of CVD dep Semiconductor fabrication employing a conformal layer of CVD dep

1998-05-11

2000-05-09

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438680, 438681, 438683, 438685, H01L 214763

Patent

active

060603895

ABSTRACT:
A method for forming a local interconnect coupled to an active area of a semiconductor substrate is provided. The method comprises etching a local interconnect trench into an interlevel dielectric horizontally above the substrate. A titanium layer may be deposited across the semiconductor topography. A TiN diffusion layer is advantageously CVD deposited across the exposed surfaces of the titanium layer. A plasma containing N.sub.2 and H.sub.2 ions is used to bombard the surface of the TiN layer. The resulting TiN layer is conformal and has a low resistivity. A tungsten fill material is then deposited upon the TiN layer to a level above the dielectric. The tungsten adheres well to the TiN layer and is substantially free of voids. The TiN and the tungsten may be removed down to level commensurate with the surface of the dielectric. In this manner a local interconnect is formed electrically coupled to the active area.

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