Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
Patent
1986-01-28
1988-05-24
Chaudhuri, Olik
Metal treatment
Barrier layer stock material, p-n type
With non-semiconductive coating thereon
148DIG37, 437 40, 357 231, H01L 21425
Patent
active
047463775
ABSTRACT:
In a surface region of a silicon semiconductor substrate (10), an arsenic diffusion layer (20) having a surface arsenic concentration of 5.times.10.sup.18 cm.sup.-3 to 5.times.10.sup.19 cm.sup.-3 is formed and then, the arsenic diffusion layer (20) is oxidized by a thermal oxidation method so that a thermally oxidized film (30) is formed on the arsenic diffusion layer (20). Thus, an insulating film (30) having an excellent insulating characteristic can be obtained, and therefore a MOS type semiconductor device with an excellent insulating characteristic can be obtained.
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Gow, III et al., "Tunnel Diode Fabrication", IBM Tech. Disc. Bull., vol. 5, No. 12, (May 1963), p. 61.
Translation of the S. Morita et al., publication Proceedings, 14a-B-9, the 1984 Autumn Meeting of Japanese Applied Physics, p. 432.
Arima Hideaki
Kobayashi Kiyoteru
Chaudhuri Olik
Mitsubishi Denki & Kabushiki Kaisha
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