Semiconductor memory device including reverse and rewrite means

Static information storage and retrieval – Read/write circuit

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365145, G11C 700

Patent

active

055463428

ABSTRACT:
The life of a semiconductor memory device can be prolonged by using a plurality of memory cells and decreasing the stress applied to the dielectric film of the memory cells storing a data value "1." This is achieved in the present invention by decreasing the number of rewritings required to retain stored data. Specifically, the present invention utilizes a reverse and rewrite means to reverse and rewrite data back into memory cells after being read, memory means for memorizing a signal indicating whether the currently stored data is in a reversed state, and judging means for judging whether the data should be reversely output.

REFERENCES:
patent: 3768071 (1993-10-01), Knauft et al.
patent: 4045779 (1977-08-01), Markle
patent: 4337522 (1982-06-01), Stewart
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 5267204 (1993-11-01), Ashmore, Jr.

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