Semiconductor integrated circuit device with multiplayered wirin

Details Semiconductor integrated circuit device with multiplayered wirin Semiconductor integrated circuit device with multiplayered wirin

1989-09-18

1993-09-21

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257413, 257751, 257754, H01L 2702

Patent

active

052471985

ABSTRACT:
A semiconductor integrated circuit device capable of having a high integration density and excellent performance and a method of fabricating the semiconductor integrated circuit device are disclosed. In this semiconductor integrated circuit device, a connecting conductor for connecting gate wiring which is formed on a field oxide film and extended from the gate of a MOSFET, to the source/drain region of another MOSFET is interposed between the gate wiring and one of two side space layers for defining the width of the gate wiring.

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patent: 4746219 (1988-05-01), Holloway et al.
patent: 4903096 (1990-02-01), Masuoka et al.
patent: 4920391 (1990-04-01), Uchida
patent: 5034791 (1991-07-01), Kameyama
Adler, "Process For Fabricating Field Effect Transistors with Polysilicon Gates Containing Metal Silicide", IBM Tech Discl. Bull., vol. 26 No. 5 2309-2310 Oct. 1983.
C. Y. Ting and M. Wittmer "The Use of Titanium-Based Contact Barrier Layes in Silicon Technology" (1982) Thin Solid Films, 96 pp. 327-345.
Sequeda "The Role of Thin Film Materials on the Technology of Integrated Circuit Fabrication" (Nov. 1985) Journal of Metals, pp. 54-59.
Murarka "Refractory Silicides of Titanium and Tantalum for Low-Resistivity Gates and Interconnects" (1980) IEEE Journal of Solid-State Circuits, vol. SC 15 No. 4 pp. 474-481.

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