Semiconductor device manfuacturing apparatus

Details Semiconductor device manfuacturing apparatus Semiconductor device manfuacturing apparatus

1993-01-28

1994-07-26

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156627, 156643, H01L 2100

Patent

active

053324641

ABSTRACT:
In a semiconductor device manufacturing apparatus for performing an etching operation with a reaction gas, in which three electrodes, namely, upper, intermediate and lower electrodes, are arranged parallel to one another, and the intermediate electrode is in the form of a grid, having a number of through-holes, the axis of at least one of the through-holes in the intermediate electrode is inclined with respect to the central axis of the intermediate electrode. Accordingly, etching energy is uniformly applied to the entire surface of a material to be etched, thereby to achieve etching uniformly both in speed and in configuration.

REFERENCES:
patent: 4661203 (1987-04-01), Smith et al.
patent: 5200016 (1993-04-01), Namose
"Counter-Electrode Structure For Endpoint Detect"; Bondur et. al.; IBM Technical Disclosure; vol. 22, No. 10, Mar. 1980; pp. 4514-4515.

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