Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-07-17
1993-01-19
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257302, 257329, H01L 2968, H01L 2910, H01L 2906
Patent
active
051810891
ABSTRACT:
A semiconductor memory device is provided which includes a semiconductor substrate of a first conductivity type, a plurality of trench capacitors formed in the substrate and a plurality of switching transistors formed on the respective trench capacitors. Each of the switching transistors is electrically connected to the corresponding trench capacitor. Each of the trench capacitors has a first electrode formed in the side portion of a trench provided in the substrate and a second electrode containing impurities of the first conductivity type and embedded in the trench. Each of the switching transistors has a source region formed from a first epitaxial layer of the first conductivity type grown on the trench so as to electrically contact the second electrode, a channel region formed from a second epitaxial layer of a second conductivity type grown on the first epitaxial layer, and a drain region formed from a third epitaxial layer of the first conductivity type grown on the second epitaxial layer. The first, second and third epitaxial layers are in contact with a polycrystalline silicon layer containing impurities of the second conductivity type. The first conductivity type is opposite to the second conductivity type.
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patent: 5006909 (1991-04-01), Kosa
patent: 5010386 (1991-04-01), Groover, III
Inoue Michihiro
Matsuo Naoto
Okada Shozo
James Andrew J.
Matsushita Electric - Industrial Co., Ltd.
Ngo Ngan Van
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