Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1988-02-03
1990-04-17
Straub, Gary P.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156605, 156DIG72, 148 33, 422245, 437159, 437965, C30B 2946, C30B 2948, C30B 710, C30B 3500
Patent
active
049177575
ABSTRACT:
In a method of performing a solution growth of a ZnSe crystal using Se as a solvent and relying on the temperature difference technique, the growth is performed under the conditions that the vapor pressure of Zn which is lower than the vapor pressure of Se is applied, under controlled manner, to the solvent during the growth process, in which the value of the Zn vapor pressure is held constant at 7.2 atm. .+-.30%, whereby a ZnSe crystal having a good crystal perfection is obtained.
REFERENCES:
patent: 4315796 (1982-02-01), Nishizawa
patent: 4389256 (1983-06-01), Nishizawa et al.
patent: 4526632 (1985-07-01), Nishizawa et al.
Honig et al., Vapor Pressure Data for the Solid and Liquid Elements, RCA Review, Jun. 1969, pp. 285-305.
Harsy, Synthesis and Growth of ZnS, ZnSe, ZnTe, GaS, Ga.sub.2 Se.sub.3 and InS Crystals in Ga and In Melts, Material Research Bulletin, vol. 3, 1968, pp. 483-487.
Rubenstein, Solution Growth of Some II-VI Compounds Using Tin as a Solvent, J. of Crystal Growth, vol. 34, 1968, pp. 309-312.
Rubenstein, Solubilities of Some II-VI Compounds in Bismuth, J. of Electro-Chemical Society, vol. 113, 1966, p. 623.
Straub Gary P.
Zaidan Hojin Handotai Kenkyu Shinkokai
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