Compound semiconductor device with bipolar transistor and laser

Details Compound semiconductor device with bipolar transistor and laser Compound semiconductor device with bipolar transistor and laser

1991-10-22

1993-01-19

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

372 50, 372 48, 372 43, 257 97, 257197, 257198, 257 96, H01L 3300

Patent

active

051810859

ABSTRACT:
A semiconductor device, in which the topography becomes flat and an LD is rapidly driven by an HBT since the HBT is formed in the vertical structure of the LD, holding many layers in common with the LD, and also, the holes flow only into a predetermined part by forming an additional layer for restricting the flow of holes. Thus, the size of the compound semiconductor device can be minimized and a flat topography can be obtained while the threshold current can be lowered by restricting the flow of holes in the LD.

REFERENCES:
patent: 4956682 (1990-09-01), Ohnaka et al.
patent: 5038185 (1991-08-01), Thornton
patent: 5051372 (1991-09-01), Sasaki
Shibata et al., "Monolithic Integration of an InGaAsP/InP Laser Diode with Heterojunction Bipolar Transistors," Appl. Phys. Lett. 45(3), Aug. 1984, pp. 191-193.
Katz, et al., "A Monolithic Integration of GaAs/GaAlAs Bipolar Transistor and Heterostructure Laser," Appl. Phys. Lett. 37(2), Jul. 5, 1980, pp. 211-213.

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