Semiconductor memory device

Static information storage and retrieval – Read/write circuit

Patent

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Details

365190, 365208, 365226, G11C 1300

Patent

active

050220039

ABSTRACT:
A semiconductor memory device includes a plurality of memory cells organized in a matrix structure and a sense-amplifier circuit for detecting a voltage at a digit line which changes in accordance with the stored information in the accessed memory cell. The sense-amplifier circuit includes at least six field effect transistors of which two pair each are for effecting current amplification to produce a sense output to an inverter circuit or through a comparison detector or directly. The amplification of current is increased and the amplitude of sense-amplifier output voltage is reduced so that the sense-amplifier output can be inverted at a high speed.

REFERENCES:
patent: 4851720 (1989-07-01), Pathak et al.

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