Process for forming two MOS structures with different juxtaposed

Details Process for forming two MOS structures with different juxtaposed Process for forming two MOS structures with different juxtaposed

1986-02-05

1987-03-10

Lindsay, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148187, 156644, 1566611, B44C 122

Patent

active

046489410

ABSTRACT:
The process of the invention consists in depositing a doped polycrystalline silicon layer on a silica dielectric which isolates it from the substrate. By photolithographic etching zones are defined which are intended to undergo ionic implantation for the buried channel, the zones to be protected being masked by the remaining silicon.
A double silica-nitride layer is formed after the substrate has been bared in the implanted regions;
Photolithographic etching of the double silica-nitride layer gives access to the first silicon level of a second doped silicon layer.
Photoetching of the whole of the two silicons allows different structures to be formed in which for example the transition zone between the two dielectrics is situated under the same gate or else in which for example the transition zone is self aligned with a gate.

REFERENCES:
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patent: 4210689 (1980-07-01), Komatsu
patent: 4282647 (1981-08-01), Richman
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patent: 4420504 (1983-12-01), Cooper et al.
patent: 4543320 (1985-09-01), Vijan
Patents Abstracts of Japan, vol. 5, No. 30 (E-47) [702], Feb. 24, 1981; & JP-A-55 158 674 (Tokyo Shibaura Denki K.K.) 10.12.1980.
Patents Abstracts of Japan, vol. 7, No. 58 (E-163) [1203], Mar. 10, 1983; & JP-A-57 204 165 (Sanyo Denki K.K.) 14.12.1982.

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