Field effect type thin film transistor having a plurality of gat

Details Field effect type thin film transistor having a plurality of gat Field effect type thin film transistor having a plurality of gat

1991-12-20

1993-10-05

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 66, 257344, 257365, 257369, H01L 2976, H01L 2904, H01L 2994, H01L 31062

Patent

active

052508358

ABSTRACT:
A thin film transistor includes a gate insulating film, a plurality of gate electrodes arranged on one surface of the gate insulating film, and a thin film semiconductor island formed on the other surface of the gate insulating film and having portions each corresponding to one of the gate electrodes. The island includes a source region in which ion impurities are diffused at high density and located at one end of the island, a drain region in which ion impurities are diffused at high density and located at the other end of the island, a first low impurity region in which ion impurities are diffused at lower density than that of the drain region and located between the drain region and one of the portions adjacent to the drain region, and a second low impurity region in which ion impurities are diffused at lower density than that of the drain region and located between at least one of the portions.

REFERENCES:
patent: 3657614 (1972-04-01), Cricchi
patent: 4697333 (1987-10-01), Nakahara
patent: 4907041 (1990-03-01), Huang
patent: 5124769 (1992-06-01), Tanaka et al.
patent: 5151759 (1992-09-01), Vinal
IEEE Transactions on Electron Devices, vol. 38, No. 1, Jan. 1991, "A High-Voltage Polysilicon TFT with Multigate Structures" by Uemoto et al. pp. 95-99.

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