Method for manufacturing compound semiconductor single crystals

Details Method for manufacturing compound semiconductor single crystals Method for manufacturing compound semiconductor single crystals

1988-11-30

1991-08-20

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566171, 156601, 156607, C01G 1500, C01G 2800

Patent

active

050411861

ABSTRACT:
Disclosed is a method of manufacturing a compound semiconductor single crystal, wherein a container containing a raw melt is placed in an atmosphere containing at least one monitor gas selected from the group consisting of hydrogen, oxygen, carbon monoxide, and carbon dioxide, a concentration of the monitor gas in the atmosphere is detected, and the detected concentration of the monitor gas is controlled to be a preset value. A compound semiconductor single crystal having a uniform carrier concentration can be obtained by controlling the concentration of the monitor gas.

REFERENCES:
patent: 4400232 (1983-08-01), Ownby et al.
patent: 4678534 (1987-07-01), Tada et al.
Little, "High-Pressure Crystal Growing Furnace", Solid State Technology, vol. 13, No. 10, Oct. 1970, pp. 28-58.
Applied Physics Letter, vol. 50, No. 3, pp. 143-145, "Growth of Semi-Insulating GaAs Crystals with Low Carbon Concentration Using Pyrolytic Boron Nitride Coated Graphite"; T. Inada et al., 19, Jan. 87.
J. Nishio et al., Gas Phase Contribution to Carbon Incorporation and Extraction Mechanisms for LEC GaAs, Journal of Crystal Growth, 99, (1990) 680-684.

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