Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1984-11-01
1986-02-25
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29580, 148 15, 148191, 148DIG43, 148DIG50, 148DIG133, 357 49, 357 50, 357 54, 156653, 427 93, H01L 2195
Patent
active
045718199
ABSTRACT:
A method for forming trench isolation oxide using doped silicon dioxide which is reflowed at elevated temperatures to collapse any voids therein and produce surface planarity. An underlying layered composite selected from oxide, polysilicon and silicon nitride permits the formation and reflow of the doped isolation oxide and remains in place in the trench to contribute to the trench isolation structure.
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patent: 4396460 (1983-08-01), Tamaki et al.
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patent: 4506434 (1985-03-01), Ogawa et al.
patent: 4519128 (1985-05-01), Chesebro et al.
Abbas, S. A., "Recessed Oxide Isolation Process" in IBM Technical Disclosure Bulletin, vol. 20, No. 1, Jun. 1977, pp. 144-145.
Rung et al., "Deep Trench Isolated CMOS Devices", IEDM 82, pp. 237-240.
Kurosawa et al., "A New Bird's-Beak Free Field Isolation Technology for VLSI Devices", IEDM 81, pp. 384-387.
Kaya Denise A.
Mundt Randall S.
Rogers Steven H.
Hawk Jr. Wilbert
Hearn Brian E.
NCR Corporation
Salys Casimer K.
Schiavelli Alan E.
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