Method of mitigating titanium impurities effects in p-type silic

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156617SP, 156DIG64, 136 89SG, 252 623E, B01J 1734

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active

042016223

ABSTRACT:
Microstructural evaluation tests performed on Cu-doped, Ti-doped and Cu/Ti doped p-type silicon single crystal wafers, before and after the solar cell fabrication, and evaluation of both dark forward and reverse I-V characteristic records for the solar cells produced from the corresponding silicon wafers, show that Cu mitigates the unfavorable effects of Ti, and thus provides for higher conversion efficiency, thereby providing an economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material.

REFERENCES:
patent: 4124410 (1978-11-01), Kotval et al.
A. M. Salama, The Effects of Copper and Titanium of Silicon Solar Cells, Conference Record, 13th IEEE Photovoltaic Specialists Conference, pp. 496-502.
J. R. Davis et al., Characterization of the Effects of Metallic Impurities . . . , Conference Record, 13th IEEE Photovoltaic Specialists Conf., pp. 490-495.
J. R. Davis et al., Silicon Solar Cells From Transition Metal Doped . . . Crystals, Conference Record, 12th IEEE Photovoltaic Specialists Conf., pp. 106-111.
D. E. Hill et al., The Effect of Secondary Impurities on Solar Cell Performance, Conference Record, 12th IEEE Photovoltaic Specialists Conf., pp. 112-119.

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