Method for production of silicon wafer and apparatus therefor

Details Method for production of silicon wafer and apparatus therefor Method for production of silicon wafer and apparatus therefor

1995-09-28

1997-10-21

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 1566451, B24B 3700

Patent

active

056792123

ABSTRACT:
The work of grinding of a silicon wafer is carried out in an etchant containing no loose abrasive and permitting selective etching of deformed layers existent in the surface part of said wafer. The removal of the deformed layers and the heavy metals from the wafer is effected simultaneously and quickly owing to the execution of the work of grinding in the etchant and the consequent synergism of the work of grinding and etching.

REFERENCES:
patent: 4276114 (1981-06-01), Takano et al.
patent: 4607496 (1986-08-01), Nagaura
patent: 4968381 (1990-11-01), Prigge et al.
patent: 5113622 (1992-05-01), Nishiguchi et al.
patent: 5376222 (1994-12-01), Miyajima et al.

Affiliated with

Also associated with

Rating

Method for production of silicon wafer and apparatus therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for production of silicon wafer and apparatus therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for production of silicon wafer and apparatus therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1003742