Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1994-01-27
1997-10-21
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 1, 117 90, 437 89, C30B 3308
Patent
active
056791526
ABSTRACT:
A method of making a single crystal Ga*N article, including the steps of: providing a substrate of crystalline material having a surface which is epitaxially compatible with Ga*N; depositing a layer of single crystal Ga*N over the surface of the substrate; and etchably removing the substrate from the layer of single crystal Ga*N, to yield the layer of single crystal Ga*N as said single crystal Ga*N article. The invention in an article aspect relates to bulk single crystal Ga*N articles, such as are suitable for use as a substrate for the fabrication of microelectronic structures thereon, and to microelectronic devices comprising bulk single crystal Ga*N substrates, and their precursor structures.
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"Current Status of GaN and Related Compounds as Wide-Gap Semiconductors" Matsuoka, T., J. Crystal Growth 124, 433-438 (1992).
Kuech Thomas F.
Tischler Michael A.
Advanced Technology & Materials Inc.
Elliott Janet R.
Garrett Felisa
Hultquist Steven J.
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