Method and apparatus for reading compressed test data from memor

Error detection/correction and fault detection/recovery – Pulse or data error handling – Memory testing

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G06F 1100

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active

060556544

ABSTRACT:
A test circuit for a memory device having a pair of arrays each of which includes a plurality of memory cells arranged in rows and columns, and a pair of complimentary digit lines being provided for each column of each array. The digit lines are selectively coupled to a pair of I/O lines for each array which are, in turn, coupled to a pair of complimentary data lines. The data lines are coupled to respective inputs of a sense amplifier, one of which is provided for each array. A multiplexer connects the pair of I/O lines for either one of the arrays to the data lines in a normal operating mode. Thus, in the normal operating mode, data is selectively coupled to the inputs of the sense amplifier from the complimentary digit lines for an addressed column. In a test mode, the multiplexer connects an I/O line for one array to one of the data lines and an I/O line for the other array to the other data line. Thus, in the test mode, data is simultaneously coupled to the inputs of the sense amplifier from respective digit lines of two different columns, thereby increasing the rate at which test data that has been written to the arrays can be read from the arrays.

REFERENCES:
patent: 5029330 (1991-07-01), Kajigaya
patent: 5268639 (1993-12-01), Gasbarro et al.
patent: 5289415 (1994-02-01), DiMarco et al.
patent: 5305272 (1994-04-01), Matsuo et al.
patent: 5451898 (1995-09-01), Johnson
patent: 5488321 (1996-01-01), Johnson
patent: 5519661 (1996-05-01), Miura
patent: 5621340 (1997-04-01), Lee et al.
patent: 5684750 (1997-11-01), Kondoh et al.
patent: 5708607 (1998-01-01), Lee et al.
Ishibashi, K. et al, "A 6-ns 4-Mb CMOS SRAM with Offset-Voltage-Insensitive Current Sense Amplifiers," IEEE Journal of Solid-State Circuits, vol. 30, No. 4, Apr. 1995, pp. 728-733.
Kuroda, T. et al., "Automated Bias Control (ABC) Circuit for High-Performance VLSI's," IEEE Journal of Solid-State Circuits, vol. 27, No. 4, Apr. 1992, pp. 539-545.
Descriptive literature entitled, "400MHz SLDRAM, 4M.times.16 SLDRAM Pipelined, Eight Bank, 2.5 V Operation," SLDRAM Consortium Advance Sheet, published throughout the United States, pp.1-22.
"Draft Standard for a High-Speed Memory Interface (SyncLink)," Microprocessor and Microcomputer Standards Subcommittee of the IEEE Computer Society, Copyright 1996 by the Institute of Electrical and Electronics Engineers, Inc. New York, NY, pp. 1-56.
Taguchi, M. et al., "A 40-ns 64-Mb DRAM with 64-b Parallel Data Bus Architecture," IEEE Journal of Solid-State Circuits, vol. 26, No. 11, Nov. 1991, pp. 1493-1497.
Taguchi M. et al., A 40ns 64Mb DRAM with Current-Sensing Data-Bus Amplifier, ISSCC Digest of Technical Papers, 1991, TAM 6.5.
Takeshi, N. et al., "A 17-ns 4-Mb CMOS DRAM," IEEE Journal of Solid State Circuits, vol. 26, No. 11, Nov. 1991, pp. 1538-1543.

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