Zr-Sn-Ti-O films

Details Zr-Sn-Ti-O films Zr-Sn-Ti-O films

2005-03-21

2009-11-03

Andújar, Leonardo (Department: 2893)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S591000, C438S785000

Reexamination Certificate

active

07611959

ABSTRACT:
A dielectric layer containing a Zr—Sn—Ti—O film and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. In an embodiment, forming the Zr—Sn—Ti—O film on a substrate includes depositing materials of the Zr—Sn—Ti—O film substantially as atomic monolayers. In an embodiment, electronic devices include a dielectric layer having a Zr—Sn—Ti—O film such that Zr—Sn—Ti—O material is configured as substantially atomic monolayers. Dielectric layers containing such Zr—Sn—Ti—O films may have minimal reactions with a silicon substrate or other structures during processing.

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