Zone melted recrystallized silicon on diamond

Details Zone melted recrystallized silicon on diamond Zone melted recrystallized silicon on diamond

1991-04-05

1993-02-16

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566207, 15662071, 156DIG64, 156DIG65, 156DIG68, 156DIG80, 156DIG88, 156DIG105, 156DIG111, 437109, 437233, 437235, C30B 1900

Patent

active

051867850

ABSTRACT:
In silicon-on-diamond (SOD) technology, diamond replaces the silicon-dioxide in the silicon-on-insulator structure. Diamond is good thermal conductor unlike silicon dioxide and a good electrical insulator like silicon dioxide. A high grade, high purity device-quality silicon wafer is chosen. An insulating diamond film of about 0.5 um or any suitable thickness is grown on the whole silicon wafer, including the rim area. A polycrystalline silicon of about 2 microns thick or so is then deposited on the whole wafer, including the rim area. Using the rim area silicon as the seed the polycrystalline silicon crystallizes into a single crystal by a zone melting recrystallization technique. The rim area is scribed off the wafer, leaving a recrystallized silicon-on-diamond (FIG. 1d). The structure top to bottom is recrystallized silicon-diamond and silicon-substrate. The structure is similar to ZMR SOI, but the insulator here is diamond instead of silicon dioxide and is therefore called ZMR SOD. The devices, such as MOSFETS, Bipolar transistors, JFETS and diodes, are fabricated in the recrystallized silicon that sits on top of the diamond film.

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Ravi, K. V. et al, "Silicon on Insulator Technology Using CVD Diamond Films", paper presented at First International Symposium on Diamond and Diamond-Like Films, spring meeting of The Electrochemical Society, Los Angeles, Calif. May 1989.

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